Download PBSS2515F Datasheet PDF
NXP Semiconductors
PBSS2515F
FEATURES - Low collector-emitter saturation voltage - High current capabilities - Improved thermal behaviour due to flat leads. APPLICATIONS - General purpose switching and muting - Low frequency driver circuits - LCD backlighting - Audio frequency general purpose amplifier applications - Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP plement: PBSS3515F. MARKING TYPE NUMBER PBSS2515F 2A MARKING CODE Fig.1 handbook, halfpage QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 15 500 1 <500 UNIT V m A A mΩ 3 3 1 2 MAM410 1 Top view Simplified outline (SC-89; SOT490) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj...