PBSS2515E
description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP plement: PBSS3515E.
1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (h FE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications
1.4 Quick reference data
Table 1: VCEO IC ICM RCEsat
[1]
Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 500 m A; IB = 50 m A
[1]
Symbol Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance
Min
- Typ 300
Max 15 0.5 1 500
Unit V A A mΩ
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
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