Download PBSS2515VPN Datasheet PDF
NXP Semiconductors
PBSS2515VPN
FEATURES - 300 m W total power dissipation - Very small 1.6 × 1.2 mm ultra thin package - Excellent coplanarity due to straight leads - Low collector-emitter saturation voltage - High current capability - Improved thermal behaviour due to flat lead - Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area - Reduces required PCB area - Reduced pick and place costs. APPLICATION - General purpose switching and muting - Low frequency driver circuits - LCD backlighting - Audio frequency general purpose amplifier applications - Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT666 plastic package. QUICK REFERENCE...