PBSS2515VS
FEATURES
- 300 m W total power dissipation
- Very small 1.6 x 1.2 mm ultra thin package
- Excellent coplanarity due to straight leads
- Low collector-emitter saturation voltage
- High current capability
- Improved thermal behaviour due to flat lead
- Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs. APPLICATIONS
- General purpose switching and muting
- Low frequency driver circuits
- LCD backlighting
- Audio frequency general purpose amplifier applications
- Battery driven equipment (mobile phones, video cameras and hand-held devices). handbook, halfpage 6
QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION
TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15 1 <500 UNIT V A mΩ
TR2 TR1
DESCRIPTION
NPN low VCEsat double transistor in a SOT666 plastic...
