PBSS2540M-Q
description
NPN low VCEsat transistor in a SOT883 small Surface-Mounted Device (SMD) plastic package. PNP plement: PBSS3540M-Q
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency due to less heat generation
- Reduced printed-circuit board requirements
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- Power management:
- DC-DC converter
- Supply line switching
- Battery charger
- LCD backlighting.
- Peripheral driver:
- Driver in low supply voltage applications (e.g. lamps and LEDs).
- Inductive load drivers (e.g. relays, buzzers and motors).
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VCEO collector-emitter voltage open base
- -
IC collector current
[1] [2]
- -
500 m A
ICM peak collector current single pulse; tp ≤ 1 ms
- -
A h FE
DC current gain
VCE = 2 V; IC =...
