BF904R - N-channel dual gate MOS-FETs

Description

Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package.

and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

Features

Specially designed for use at 5 V supply voltage.
Short channel transistor with high transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Superior cross-modulation performance during AGC.

NXP Semiconductors

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BF904R n-channel dual gate mos-fets by NXP - Datasheet Preview

Datasheet Details

Part number	BF904R
Manufacturer	NXP Semiconductors
File Size	111.30 KB
Description	N-channel dual gate MOS-FETs
Datasheet	BF904R Datasheet

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BF904; BF904R N-channel dual gate MOS-FETs Product speciﬁcation Supersedes data of 1997 Sep 05 1999 May 17 Philips Semiconductors Product speciﬁcation N-channel dual gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package.

Published: Mar 23, 2005 |