BF904WR Datasheet PDF (N-channel dual-gate MOS-FET)

BF904WR - N-channel dual-gate MOS-FET

Datasheet Summary

Description

Enhancement type field-effect transistor in a plastic microminiature SOT343R package.

The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

Marking code: MC.

Features

Specially designed for use at 5 V supply voltage.
Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Superior cross-modulation performance during AGC.

Datasheet Details

Part number	BF904WR
Manufacturer	NXP
File Size	119.78 KB
Description	N-channel dual-gate MOS-FET
Datasheet	BF904WR Datasheet
Additional preview pages of the BF904WR datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BF904WR N-channel dual-gate MOS-FET Product speciﬁcation File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package.

Published: Mar 23, 2005 |