Datasheet4U Logo Datasheet4U.com

BF9035SNZ-M - N-Channel MOSFET

Datasheet Summary

Description

The BF9035SNZ-M is a Single N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This is applied to electronic systems as a power switch.

Features

  • z VDS=30 V z ID=4A z Low on-state resistance RDS (on).

📥 Download Datasheet

Datasheet preview – BF9035SNZ-M

Datasheet Details

Part number BF9035SNZ-M
Manufacturer BYD
File Size 184.16 KB
Description N-Channel MOSFET
Datasheet download datasheet BF9035SNZ-M Datasheet
Additional preview pages of the BF9035SNZ-M datasheet.

📁 Similar Datasheet

  • BF900 - Sicherungshalter (Inter Control)
  • BF900 - n-channel dual gate MOSFET (Siliconix)
  • BF901 - Silicon n-channel dual gate MOS-FETs (NXP)
  • BF901R - Silicon n-channel dual gate MOS-FETs (NXP)
  • BF904 - N-channel dual gate MOS-FETs (NXP)
  • BF904A - N-channel dual gate MOS-FETs (NXP)
  • BF904AR - N-channel dual gate MOS-FETs (NXP)
  • BF904AWR - N-channel dual gate MOS-FETs (NXP)
  • BF904R - N-channel dual gate MOS-FETs (NXP)
  • BF904WR - N-channel dual-gate MOS-FET (NXP)
Other Datasheets by BYD

Full PDF Text Transcription

Click to expand full text
BYD Microelectronics Co., Ltd. BF9035SNZ-M 30V N-Channel MOSFET General Description The BF9035SNZ-M is a Single N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This is applied to electronic systems as a power switch. Features z VDS=30 V z ID=4A z Low on-state resistance RDS (on) <65mΩ (VGS=10V，ID=2.0A) RDS (on) < 80mΩ (VGS=4.5V，ID=2.0A) RDS (on) < 95mΩ (VGS=3.0V，ID=2.
Published: |