BF904A Datasheet PDF - NXP N-channel dual gate MOS-FETs Specs

BF904A - N-channel dual gate MOS-FETs

Datasheet Summary

Description

Enhancement type field-effect transistors.

The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

Features

Specially designed for use at 5 V supply voltage.
Short channel transistor with high transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Superior cross-modulation performance during AGC.

Datasheet Details

Part number	BF904A
Manufacturer	NXP
File Size	114.51 KB
Description	N-channel dual gate MOS-FETs
Datasheet	BF904A Datasheet
Additional preview pages of the BF904A datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product speciﬁcation Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product speciﬁcation N-channel dual gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistors.

Published: Mar 23, 2005 |