BF901R Datasheet PDF - NXP Silicon n-channel dual gate MOS-FETs Specs

BF901R - Silicon n-channel dual gate MOS-FETs

Datasheet Summary

Description

Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected.

They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low voltage operation.

Features

Intended for low voltage operation.
Short channel transistor with high ratio  Yfs :Cis.
Low noise gain-controlled amplifier to 1 GHz.
BF901R has reverse pinning.

Datasheet Details

Part number	BF901R
Manufacturer	NXP
File Size	46.98 KB
Description	Silicon n-channel dual gate MOS-FETs
Datasheet	BF901R Datasheet
Additional preview pages of the BF901R datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product speciﬁcation File under Discrete Semiconductors, SC07 November 1992 Philips Semiconductors Product speciﬁcation Silicon n-channel dual gate MOS-FETs FEATURES • Intended for low voltage operation • Short channel transistor with high ratio  Yfs :Cis • Low noise gain-controlled amplifier to 1 GHz • BF901R has reverse pinning. DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low voltage operation.

Published: Mar 23, 2005 |