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BF9028DND-GE - N-Channel MOSFET

Datasheet Summary

Description

The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch.

This device has ESD-protection and low resistance characteristics.

Features

  • z VDS=24 V z ID=6 A z Low on-state resistance RDS (on) < 19.5 mΩ (VGS=4.5V) RDS (on) < 20 mΩ (VGS=3.8V) RDS (on) < 26 mΩ (VGS=3.0V) RDS (on) < 30 mΩ (VGS=2.5V) Absolute Maximum Ratings(TC = 25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage PD Power Dissipation TC = 25°C TJ,Tstg Operating and Storage Temperature Range (Note a) Value 24 6 24 ±10 2.0 -55 to +150 Unit V A A V W ℃ Ordering Information Part.

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Datasheet Details

Part number BF9028DND-GE
Manufacturer BYD
File Size 213.31 KB
Description N-Channel MOSFET
Datasheet download datasheet BF9028DND-GE Datasheet
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BYD Microelectronics Co., Ltd. BF9028DND-GE 20V N-Channel MOSFET General Description The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. Features z VDS=24 V z ID=6 A z Low on-state resistance RDS (on) < 19.5 mΩ (VGS=4.5V) RDS (on) < 20 mΩ (VGS=3.8V) RDS (on) < 26 mΩ (VGS=3.0V) RDS (on) < 30 mΩ (VGS=2.5V) Absolute Maximum Ratings(TC = 25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage PD Power Dissipation TC = 25°C TJ,Tstg Operating and Storage Temperature Range (Note a) Value 24 6 24 ±10 2.
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