Datasheet4U Logo Datasheet4U.com

BF9028DNT - N-Channel MOSFET

Datasheet Summary

Description

The BF9028DNT is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch.

This device has ESD-protection and low resistance characteristics.

.

Features

  • .
  • Can be driven by a 2.3 V power source.
  • Low on-state resistance RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A) RDS(on) = 22.0mΩ TYP(VGS = 2.5V, ID = 3.0A).
  • Built-in G-S protection diode against ESD.
  • Lead Pb-free and Halogen-free 14 Absolute Maximum Ratings(TC = 25℃) Symbol VDS ID IDM VGS PD TJ,Tstg TL Parameter Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-Source Voltage Po.

📥 Download Datasheet

Datasheet preview – BF9028DNT

Datasheet Details

Part number BF9028DNT
Manufacturer BYD
File Size 287.13 KB
Description N-Channel MOSFET
Datasheet download datasheet BF9028DNT Datasheet
Additional preview pages of the BF9028DNT datasheet.

📁 Similar Datasheet

  • BF900 - Sicherungshalter (Inter Control)
  • BF900 - n-channel dual gate MOSFET (Siliconix)
  • BF901 - Silicon n-channel dual gate MOS-FETs (NXP)
  • BF901R - Silicon n-channel dual gate MOS-FETs (NXP)
  • BF904 - N-channel dual gate MOS-FETs (NXP)
  • BF904A - N-channel dual gate MOS-FETs (NXP)
  • BF904AR - N-channel dual gate MOS-FETs (NXP)
  • BF904AWR - N-channel dual gate MOS-FETs (NXP)
  • BF904R - N-channel dual gate MOS-FETs (NXP)
  • BF904WR - N-channel dual-gate MOS-FET (NXP)
Other Datasheets by BYD

Full PDF Text Transcription

Click to expand full text
BYD Microelectronics Co., Ltd. BF9028DNT 20V N-Channel MOSFET 85 General Description The BF9028DNT is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. . TSSOP-8 1 : drain1 2,3 : source1 4 : gate1 5: gate2 6,7 : source2 8 : drain2 Features  • Can be driven by a 2.3 V power source • Low on-state resistance RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A) RDS(on) = 22.0mΩ TYP(VGS = 2.5V, ID = 3.
Published: |