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NP100P06PDG - MOS FIELD EFFECT TRANSISTOR

NEC

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Datasheet Details

Part number	NP100P06PDG
Manufacturer	NEC
File Size	210.88 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP100P06PDG_NEC.pdf

NP100P06PDG Product details

Description

The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS =.
10 V, ID =.
50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS =.
4.5 V, ID =.
50 A).
High current rating: ID(DC) = m100 A (TO-263).

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Published: Sep 19, 2007 |