UTG80N65ND-S datasheet, igbt equivalent, UTC

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Features and benefits

* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.= 1.6V @ IC=80A, VGE=15V (TC =25°C)
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Application

* FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.= 1.6V @ IC=80.

Description

The UTC UTG80N65ND-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG80N65ND-S is suitable for.

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