* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C * Low switching loss: Eoff, typ=0.96mJ @ IC=25A and.

* FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =2.0V @ IC=25.

The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc. The UTC UTG25N120.

UTG25N120-G2

UTG25N65-S

UTG20N65-S

UTG28N65-S

UTG10N65-S

UTG30N65-S

UTG40N120FQ-S

UTG40N65-S

UTG4N65-S

UTG50N120-S

UTG60N60

UTG6N60-S

UTG70N65-S

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