UTG6N60-S igbt equivalent, 600v trench gate field-stop igbt.
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=6.0A, VGE=15V
(TC =25°C)
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* FEATURES
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=6.0.
The UTC UTG6N60-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG6N60-S is suitable for the r.
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