UTG60N60 igbt equivalent, 600v trench gate field-stop igbt.
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=60A, VGE=15V
(TC =25°C)
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* ORDERING INFORMATION
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* FEATURES
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=60A.
The UTC UTG60N60 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG60N60 is suitable for the res.
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