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UTG60N60 Datasheet, UTC

UTG60N60 igbt equivalent, 600v trench gate field-stop igbt.

UTG60N60 Avg. rating / M : 1.0 rating-11

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UTG60N60 Datasheet

Features and benefits

* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=60A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Ord.

Application


* FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=60A.

Description

The UTC UTG60N60 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG60N60 is suitable for the res.

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UTG60N60 Page 1 UTG60N60 Page 2 UTG60N60 Page 3

TAGS

UTG60N60
600V
TRENCH
GATE
FIELD-STOP
IGBT
UTG6N60-S
UTG10N65-S
UTG20N65-S
UTC

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