UTG28N65-S igbt equivalent, 650v trench gate field-stop igbt.
* High switching speed * High avalanche ruggedness
1
* Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=28A, VGE=15V
(TC =25°C)
TO-220
* SYMBOL
* ORDERING .
TO-247 TO-220F1
* FEATURES
* High switching speed * High avalanche ruggedness
1
* Low saturation voltage: VCE(.
The UTC UTG28N65-S is an Trench Field-Stop Insulated
Gate Bipolar Transistor. it uses UTC’s advanced technology to
provide customers with high switching speed, low saturation
voltage and low switching loss, etc. The UTC UTG28N65-S is suitable for.
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