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UTG25N65-S Datasheet, UTC

UTG25N65-S igbt equivalent, 650v trench gate field-stop igbt.

UTG25N65-S Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 211.84KB)

UTG25N65-S Datasheet
UTG25N65-S Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 211.84KB)

UTG25N65-S Datasheet

Features and benefits

* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=25A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Or.

Application


* FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=25.

Description

The UTC UTG25N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG25N65-S is suitable for the.

Image gallery

UTG25N65-S Page 1 UTG25N65-S Page 2 UTG25N65-S Page 3

TAGS

UTG25N65-S
650V
TRENCH
GATE
FIELD-STOP
IGBT
UTC

Manufacturer


UTC

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