logo

UTG10N65-S Datasheet, UTC

UTG10N65-S igbt equivalent, 650v trench gate field-stop igbt.

UTG10N65-S Avg. rating / M : 1.0 rating-11

datasheet Download

UTG10N65-S Datasheet

Features and benefits

* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=10A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Or.

Application


* FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=10.

Description

The UTC UTG10N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG10N65-S is suitable for the.

Image gallery

UTG10N65-S Page 1 UTG10N65-S Page 2 UTG10N65-S Page 3

TAGS

UTG10N65-S
650V
TRENCH
GATE
FIELD-STOP
IGBT
UTG20N65-S
UTG25N120
UTG25N120-G2
UTC

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts