UTG10N65-S igbt equivalent, 650v trench gate field-stop igbt.
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=10A, VGE=15V
(TC =25°C)
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* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=10.
The UTC UTG10N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG10N65-S is suitable for the.
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