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UTG25N120-G2 Datasheet, UTC

UTG25N120-G2 igbt equivalent, 1200v trench gate field-stop igbt.

UTG25N120-G2 Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 746.71KB)

UTG25N120-G2 Datasheet

Features and benefits

* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C) * Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =.

Application


* FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =1.8V @ IC=25.

Description

The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG25N120-G2 is suitable for.

Image gallery

UTG25N120-G2 Page 1 UTG25N120-G2 Page 2 UTG25N120-G2 Page 3

TAGS

UTG25N120-G2
1200V
TRENCH
GATE
FIELD-STOP
IGBT
UTC

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