* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C) * Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =.

* FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =1.8V @ IC=25.

The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG25N120-G2 is suitable for.

UTG25N120

UTG25N65-S

UTG20N65-S

UTG28N65-S

UTG10N65-S

UTG30N65-S

UTG40N120FQ-S

UTG40N65-S

UTG4N65-S

UTG50N120-S

UTG60N60

UTG6N60-S

UTG70N65-S

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