UTG50N120-S igbt equivalent, 1200v trench gate field-stop igbt.
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.45V @ IC=50A, VGE=15V
(TC =25°C)
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* FEATURES
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.45V @ IC=50.
The UTC UTG50N120-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG50N120-S is suitable for t.
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