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UTG50N120-S Datasheet, UTC

UTG50N120-S igbt equivalent, 1200v trench gate field-stop igbt.

UTG50N120-S Avg. rating / M : 1.0 rating-16

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UTG50N120-S Datasheet

Features and benefits

* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.45V @ IC=50A, VGE=15V (TC =25°C)
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Application


* FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.45V @ IC=50.

Description

The UTC UTG50N120-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG50N120-S is suitable for t.

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TAGS

UTG50N120-S
1200V
TRENCH
GATE
FIELD-STOP
IGBT
UTG10N65-S
UTG20N65-S
UTG25N120
UTC

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