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UTG40N120FQ-S Datasheet, UTC

UTG40N120FQ-S igbt equivalent, 1200v trench gate field-stop igbt.

UTG40N120FQ-S Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 741.36KB)

UTG40N120FQ-S Datasheet
UTG40N120FQ-S
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 741.36KB)

UTG40N120FQ-S Datasheet

Features and benefits

* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.85V @ IC=40A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Or.

Application


* FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.85V @ IC=40.

Description

The UTC UTG40N120FQ-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG40N120FQ-S is suitable f.

Image gallery

UTG40N120FQ-S Page 1 UTG40N120FQ-S Page 2 UTG40N120FQ-S Page 3

TAGS

UTG40N120FQ-S
1200V
TRENCH
GATE
FIELD-STOP
IGBT
UTC

Manufacturer


UTC

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