UTG40N120FQ-S igbt equivalent, 1200v trench gate field-stop igbt.
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.85V @ IC=40A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION
Or.
* FEATURES
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.85V @ IC=40.
The UTC UTG40N120FQ-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG40N120FQ-S is suitable f.
Image gallery
TAGS
Manufacturer
Related datasheet