RF2L42008CG2 datasheet, transistor equivalent, STMicroelectronics

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RF2L42008CG2 Datasheet

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF2L42008CG2 3600 MHz 28 V 8W 14.5 dB 47%
* High efficiency and linear gain operations
* Integrated ESD .

Application

* Telecom and wideband communications
* Avionics and radar
* 2.45 GHz industrial Description The RF2L42008C.

Description

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulat.

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