RF2L16180CB4 datasheet, transistor equivalent, STMicroelectronics

Features and benefits

Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60%
* High efficiency and linear gain operations
* Integrated ESD prot.

Application

* Large positive and negative gate-source voltage range for improved class C operation
* In compliance with the .

Description

The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pu.

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