RF2L16180CB4 transistor equivalent, rf power ldmos transistor.
Order code
f (MHz)
VDD
POUT
Gain
Efficiency
RF2L16180CB4
1450
28 V
180 W
14 dB
60%
* High efficiency and linear gain operations
* Integrated ESD prot.
* Large positive and negative gate-source voltage range for improved class C
operation
* In compliance with the .
The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pu.
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