RF2L24280CB4 transistor equivalent, rf power ldmos transistor.
Order code
Frequency
VDD
POUT
Gain Efficiency
RF2L24280CB4
2450 MHz
28 V
280 W
13 dB
60%
* High efficiency and linear gain operations
* Integrated ESD.
* Industrial, scientific and medical
Description
The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designe.
The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V operation.
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