logo

RF2L24280CB4 Datasheet, STMicroelectronics

RF2L24280CB4 transistor equivalent, rf power ldmos transistor.

RF2L24280CB4 Avg. rating / M : 1.0 rating-11

datasheet Download (1.12MB)

RF2L24280CB4 Datasheet

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF2L24280CB4 2450 MHz 28 V 280 W 13 dB 60%
* High efficiency and linear gain operations
* Integrated ESD.

Application


* Industrial, scientific and medical Description The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designe.

Description

The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V operation. Product s.

Image gallery

RF2L24280CB4 Page 1 RF2L24280CB4 Page 2 RF2L24280CB4 Page 3

TAGS

RF2L24280CB4
Power
LDMOS
transistor
RF2L27015CG2
RF2L27025CG2
RF2L15200CB4
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts