LDMOS Datasheet | Pinout, Features, Price Comparison & PDF

DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510

Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extrem

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t

www.DataSheet4U.com LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIE

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Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness

NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device

BLF188XRG Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged

Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET

www.DataSheet4U.com BLF888 UHF power LDMOS transistor Rev. 01 — 16 December 2008 Objective data sheet 1. Product profile 1.1 General description A 50

BLP05H6110XR; BLP05H6110XRG Power LDMOS transistor Rev. 4 — 30 August 2016 Product data sheet 1. Product profile 1.1 General description A 110 W ex

BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 150

DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Prelimin

R.0.2P.991602-BEHRE 0809LD60P 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD60P is a common source N-Channel enhance

www.DataSheet4U.com BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data sheet 1. Product profile 1.1 Genera

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devi

RF2L16180CB4 Datasheet 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor 1 2 5 4 3 B4E Pin connection Pin Connection 1 Drain A 2 Drain B

BLM2425M7S60P LDMOS 2-stage power MMIC Rev. 4 — 29 June 2017 Product data sheet 1. Product profile 1.1 General description 60W dual path, 2-stage p