A2I20H080NR1 Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: NXP Semiconductors

A2I20H080NR1 rf ldmos wideband integrated power amplifiers by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	A2I20H080NR1
Manufacturer	NXP Semiconductors
File Size	414.28 KB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	A2I20H080NR1 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: A2I20H080N Rev.

0, 3/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20H080N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 1800 to 2200 MHz.

This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.

Key Features

Advanced High Performance In--Package Doherty.
On--Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Dis.

More Datasheets from NXP Semiconductors

Part Number	Description
A2I20H080GNR1	RF LDMOS Wideband Integrated Power Amplifiers
A2I09VD015GNR1	Power Amplifiers
A2I09VD015NR1	Power Amplifiers
A2I09VD030GN	Power Amplifiers
A2I09VD030N	Power Amplifiers
A2I35H060GNR1	RF LDMOS Wideband Integrated Power Amplifiers
A2I35H060NR1	RF LDMOS Wideband Integrated Power Amplifiers