A2I09VD030N Datasheet Power Amplifiers

Manufacturer: NXP Semiconductors

A2I09VD030N power amplifiers by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	A2I09VD030N
Manufacturer	NXP Semiconductors
File Size	486.69 KB
Description	Power Amplifiers
Datasheet	A2I09VD030N Datasheet

Overview

NXP Semiconductors Technical Data Document Number: A2I09VD030N Rev.

2, 10/2022 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD030N wideband integrated circuit is designed with on−chip matching that makes it usable from 575 to 1300 MHz.

This multi−stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

Key Features

On.
chip matching (50 ohm input, DC blocked).
Integrated quiescent current temperature compensation with enable/disable function (1).
Designed for digital predistortion error correction systems.
Optimized for Doherty.

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