A2I09VD015GNR1 Datasheet Power Amplifiers

Manufacturer: NXP Semiconductors

Download the A2I09VD015GNR1 datasheet PDF. This datasheet also includes the A2I09VD015NR1 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

A2I09VD015GNR1 power amplifiers by NXP Semiconductors - Datasheet Preview — Note: The manufacturer provides a single datasheet file (A2I09VD015NR1-NXP.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	A2I09VD015GNR1
Manufacturer	NXP Semiconductors
File Size	541.45 KB
Description	Power Amplifiers
Datasheet	A2I09VD015GNR1 Datasheet

Overview

NXP Semiconductors Technical Data Document Number: A2I09VD015N Rev.

0, 06/2018 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD015N wideband integrated circuit is designed with on--chip matching that makes it usable from 575 to 960 MHz.

This multi -- stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

Key Features

On--chip matching (50 ohm input, DC blocked).
Integrated quiescent current temperature compensation with enable/disable function (2).
Designed for digital predistortion error correction systems.
Optimized for Doherty.

More Datasheets from NXP Semiconductors

Part Number	Description
A2I09VD015NR1	Power Amplifiers
A2I09VD030GN	Power Amplifiers
A2I09VD030N	Power Amplifiers
A2I20H080GNR1	RF LDMOS Wideband Integrated Power Amplifiers
A2I20H080NR1	RF LDMOS Wideband Integrated Power Amplifiers
A2I35H060GNR1	RF LDMOS Wideband Integrated Power Amplifiers
A2I35H060NR1	RF LDMOS Wideband Integrated Power Amplifiers