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A2I09VD015NR1 Datasheet Power Amplifiers

Manufacturer: NXP Semiconductors

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Overview

NXP Semiconductors Technical Data Document Number: A2I09VD015N Rev.

0, 06/2018 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD015N wideband integrated circuit is designed with on--chip matching that makes it usable from 575 to 960 MHz.

This multi -- stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

Key Features

  • On--chip matching (50 ohm input, DC blocked).
  • Integrated quiescent current temperature compensation with enable/disable function (2).
  • Designed for digital predistortion error correction systems.
  • Optimized for Doherty.

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