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A2I09VD030GN Datasheet Power Amplifiers

Manufacturer: NXP Semiconductors

Download the A2I09VD030GN datasheet PDF. This datasheet also includes the A2I09VD030N variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (A2I09VD030N-NXP.pdf) that lists specifications for multiple related part numbers.

Overview

NXP Semiconductors Technical Data Document Number: A2I09VD030N Rev.

2, 10/2022 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD030N wideband integrated circuit is designed with on−chip matching that makes it usable from 575 to 1300 MHz.

This multi−stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

Key Features

  • On.
  • chip matching (50 ohm input, DC blocked).
  • Integrated quiescent current temperature compensation with enable/disable function (1).
  • Designed for digital predistortion error correction systems.
  • Optimized for Doherty.

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