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RF2L36040CF2 Datasheet, STMicroelectronics

RF2L36040CF2 transistor equivalent, rf power ldmos transistor.

RF2L36040CF2 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 499.38KB)

RF2L36040CF2 Datasheet
RF2L36040CF2 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 499.38KB)

RF2L36040CF2 Datasheet

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF2L36040CF2 3600 MHz 28 V 40 W 14 dB 48%
* High efficiency and linear gain operations
* Integrated ESD .

Application


* Telecom
* S-band radar Description The RF2L36040CF2 is a 40 W, 28 V internally matched LDMOS FET, designed fo.

Description

The RF2L36040CF2 is a 40 W, 28 V internally matched LDMOS FET, designed for cellular and S-band radar applications at frequencies from 2.7 to 3.6 GHz. It can be used in class AB, B or C for all typical modulation formats. DS13235 - Rev 2 - April 202.

Image gallery

RF2L36040CF2 Page 1 RF2L36040CF2 Page 2 RF2L36040CF2 Page 3

TAGS

RF2L36040CF2
power
LDMOS
transistor
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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