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RF2L36075CF2 Datasheet, STMicroelectronics

RF2L36075CF2 transistor equivalent, rf power ldmos transistor.

RF2L36075CF2 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.35MB)

RF2L36075CF2 Datasheet
RF2L36075CF2
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.35MB)

RF2L36075CF2 Datasheet

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF2L36075CF2 3500 MHz 28 V 75 W 12.5 dB 45%
* High efficiency and linear gain operations
* Integrated ESD.

Application


* Telecom
* S-Band radar Description The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed fo.

Description

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cell.

Image gallery

RF2L36075CF2 Page 1 RF2L36075CF2 Page 2 RF2L36075CF2 Page 3

TAGS

RF2L36075CF2
power
LDMOS
transistor
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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