RF2L16180CF2 transistor equivalent, rf power ldmos transistor.
Order code
Frequency
VDD
POUT
Gain
Efficiency
RF2L16180CF2
1470 MHz
28 V 180 W 17.5 dB
56%
* High efficiency and linear gain operations
* Integrated ES.
* Base stations
* L-band radars
* Industrial, scientific and medical (ISM)
Description
The RF2L16180CF2 is .
The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the frequency range from 1.3 to 1.7 GHz. It can be used in class AB, B or C for all typical modulation f.
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