RF2L16180CF2 datasheet, transistor equivalent, STMicroelectronics

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF2L16180CF2 1470 MHz 28 V 180 W 17.5 dB 56%
* High efficiency and linear gain operations
* Integrated ES.

Application

* Base stations
* L-band radars
* Industrial, scientific and medical (ISM) Description The RF2L16180CF2 is .

Description

The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the frequency range from 1.3 to 1.7 GHz. It can be used in class AB, B or C for all typical modulation f.

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