RF2L15200CB4 transistor equivalent, rf power ldmos transistor.
Order code
Frequency
VDD
POUT
Gain Efficiency
RF2L15200CB4
860 MHz
28 V
200 W
17.5 dB
72%
* High efficiency and linear gain operations
* Integrated ES.
* Broadband commercial communications
* TV broadcast
* Avioncs
* Industrial
Description
The RF2L15200CB.
The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class AB, B or C for all typical modulation formats.
Product status link RF2L15200CB4
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