RF2L15200CB4 datasheet, transistor equivalent, STMicroelectronics

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datasheet Download (Size : 769.70KB)

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72%
* High efficiency and linear gain operations
* Integrated ES.

Application

* Broadband commercial communications
* TV broadcast
* Avioncs
* Industrial Description The RF2L15200CB.

Description

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class AB, B or C for all typical modulation formats. Product status link RF2L15200CB4 Product sum.

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