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RF2L15200CB4 Datasheet, STMicroelectronics

RF2L15200CB4 transistor equivalent, rf power ldmos transistor.

RF2L15200CB4 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 769.70KB)

RF2L15200CB4 Datasheet
RF2L15200CB4
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 769.70KB)

RF2L15200CB4 Datasheet

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72%
* High efficiency and linear gain operations
* Integrated ES.

Application


* Broadband commercial communications
* TV broadcast
* Avioncs
* Industrial Description The RF2L15200CB.

Description

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class AB, B or C for all typical modulation formats. Product status link RF2L15200CB4 Product sum.

Image gallery

RF2L15200CB4 Page 1 RF2L15200CB4 Page 2 RF2L15200CB4 Page 3

TAGS

RF2L15200CB4
power
LDMOS
transistor
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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