RF2L16080CF2 transistor equivalent, rf power ldmos transistor.
Order code
Frequency
VDD
POUT
Gain Efficiency
RF2L16080CF2
1625 MHz
28 V
80 W
18 dB
57%
* High efficiency and linear gain operations
* Integrated ESD .
* Satellite comms
* Telecom
* ISM
Description
The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, de.
The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats.
DS132.
Image gallery
TAGS