RF2L16080CF2 datasheet, transistor equivalent, STMicroelectronics

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF2L16080CF2 1625 MHz 28 V 80 W 18 dB 57%
* High efficiency and linear gain operations
* Integrated ESD .

Application

* Satellite comms
* Telecom
* ISM Description The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, de.

Description

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats. DS132.

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