FDMS3669S mosfet equivalent, dual n-channel mosfet.
Q1: N-Channel
* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
* Max rDS(on) = 5 mΩ at VGS = 10 .
* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE
* RoHS Compliant
Pin.
Asymmetric Dual N-Channel MOSFET Features
Q1: N-Channel
* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
* Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.2 .
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