FDMS3669S datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

Q1: N-Channel
* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel
* Max rDS(on) = 5 mΩ at VGS = 10 .

Application

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE
* RoHS Compliant Pin.

Description

Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel
* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel
* Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.2 .

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