FDMS3660S Overview
This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
FDMS3660S Key Features
- Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A
- Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A
- Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A
- Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A
- MOSFET Integration Enables Optimum Layout for Lower Circuit
- These Devices are Pb-Free and are RoHS pliant
