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FDMS3660S Datasheet ON Semiconductor

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File Size : 702.36KB · FDMS3660S Avg. rating / M : star-14

Features and Benefits

Q1: N−Channel
• Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A
• Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel
• Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A
• Max rDS(on) = 2.2 mW at VGS .

FDMS3660S FDMS3660S FDMS3660S
TAGS
Asymmetric
Dual
N-Channel
MOSFET
FDMS3660AS
FDMS3660S
FDMS3662

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