FDMS3660S datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

Q1: N−Channel
* Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel
* Max rDS(on) = 1.8 mW at VGS = 10 V.

Application

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE www.onsemi.com Pin 1 G1.

Description

This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) hav.

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