• Part: FDMS3660S
  • Description: Asymmetric Dual N-Channel MOSFET
  • Manufacturer: onsemi
  • Size: 702.36 KB
Download FDMS3660S Datasheet PDF
FDMS3660S page 2
Page 2
FDMS3660S page 3
Page 3

FDMS3660S Key Features

  • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A
  • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A
  • Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A
  • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A
  • MOSFET Integration Enables Optimum Layout for Lower Circuit
  • These Devices are Pb-Free and are RoHS pliant