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FDMS3660S Datasheet Asymmetric Dual N-Channel MOSFET

Manufacturer: onsemi

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Datasheet Details

Part number FDMS3660S
Manufacturer onsemi
File Size 702.36 KB
Description Asymmetric Dual N-Channel MOSFET
Datasheet download datasheet FDMS3660S Datasheet

General Description

This device includes two specialized N−Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Overview

FDMS3660S PowerTrench) Power Stage Asymmetric Dual N−Channel.

Key Features

  • Q1: N.
  • Channel.
  • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
  • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
  • Channel.
  • Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A.
  • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
  • These Devices.

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