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FDMS3660S Datasheet Fairchild Semiconductor

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Fairchild Semiconductor · FDMS3660S File Size : 577.12KB · 3 hits

Features and Benefits

Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.2 mΩ at VGS .

FDMS3660S FDMS3660S FDMS3660S
TAGS
Asymmetric
Dual
N-Channel
MOSFET
FDMS3660AS
FDMS3660S
FDMS3662

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