Datasheet Details
| Part number | FDMS3664S |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 547.09 KB |
| Description | MOSFET |
| Datasheet |
 FDMS3664S Datasheet
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| Part number | FDMS3664S |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 547.09 KB |
| Description | MOSFET |
| Datasheet |
FDMS3664S Datasheet
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Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
FDMS3664S PowerTrench® Power Stage FDMS3664S PowerTrench® Power Stage January 2015 Asymmetric Dual N-Channel.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMS3664S | Dual N-Channel MOSFET | ON Semiconductor |
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