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FDMS3664S Datasheet

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Fairchild Semiconductor · FDMS3664S File Size : 547.09KB · 2 hits

Features and Benefits

General Description Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A „ Low inductance packaging shortens rise/fall times, result.

FDMS3664S FDMS3664S FDMS3664S
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MOSFET
FDMS3664S
FDMS3660AS
FDMS3660S
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