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FDMS3662 - N-Channel MOSFET

Datasheet Summary

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Features

  • Max RDS(on) = 14.8 mW at VGS = 10 V, ID = 8.9 A.
  • Advanced Package and Silicon combination for low RDS(on).
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Device is Pb.
  • Free and RoHS Compliant Typical.

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Datasheet preview – FDMS3662

Datasheet Details

Part number FDMS3662
Manufacturer ON Semiconductor
File Size 468.20 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS3662 Datasheet
Additional preview pages of the FDMS3662 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel POWERTRENCH) 100 V, 39 A, 14.8 mW FDMS3662 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max RDS(on) = 14.8 mW at VGS = 10 V, ID = 8.
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