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FDMS3660AS - MOSFET

FDMS3660AS Description

FDMS3660AS PowerTrench® Power Stage FDMS3660AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

FDMS3660AS Features

* Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
* Low inductance packaging shortens rise/

FDMS3660AS Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin 1 Pin

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