FDMS3660AS Overview
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
FDMS3660AS Key Features
- Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
- Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
- Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
- Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS pliant
