FDMS3660S - Asymmetric Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDMS3660S
Manufacturer	ON Semiconductor
File Size	702.36 KB
Description	Asymmetric Dual N-Channel MOSFET
Datasheet	FDMS3660S Datasheet
Additional preview pages of the FDMS3660S datasheet.

Product details

Description

This device includes two specialized N Channel MOSFETs in a dual PQFN package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Features

Q1: N.
Channel.
Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
Channel.
Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A.
Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
These Devices.

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Published: Dec 12, 2021 |