Datasheet Details
| Part number | FDMS3600S |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 514.62 KB |
| Description | MOSFET |
| Datasheet |
 FDMS3600S Datasheet
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| Part number | FDMS3600S |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 514.62 KB |
| Description | MOSFET |
| Datasheet |
FDMS3600S Datasheet
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Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses This device includes two specialized N-Channel MOSFETs in a dual PQFN package.The switch node has been internally connected to enable easy placeme
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