Datasheet Details
| Part number | FDMS3606AS |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 508.85 KB |
| Description | MOSFET |
| Datasheet |
 FDMS3606AS Datasheet
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| Part number | FDMS3606AS |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 508.85 KB |
| Description | MOSFET |
| Datasheet |
FDMS3606AS Datasheet
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Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant This device
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