FDMS3606S - Asymmetric Dual N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMS3606S
Manufacturer	Fairchild Semiconductor
File Size	516.21 KB
Description	Asymmetric Dual N-Channel MOSFET
Datasheet	FDMS3606S Datasheet
Additional preview pages of the FDMS3606S datasheet.

Product details

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. Computing Communications General Purpose Point of Load Notebook VCORE Pin 1 Pin 1 G1 D1 D1 D1 D1 PHASE (S1/D2) G2 S2 S2 S2 Top Power

Features

Q1: N-Channel.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A.
Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant December 2012.

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Published: Mar 9, 2016 |