FDMS003N08C Datasheet (ON Semiconductor)

FDMS003N08C, N-Channel MOSFET

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Applications

FDMS003N08C Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56 A

* Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A

* 50% lower Qrr than other MOSFET suppliers

* Lowers switching noise/EMI

* MSL1 robust package design

* 100% UIL te