FDMS007N08LC - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDMS007N08LC
Manufacturer	ON Semiconductor
File Size	511.55 KB
Description	N-Channel MOSFET
Datasheet	FDMS007N08LC-ONSemiconductor.pdf

FDMS007N08LC Product details

Description

This N Channel MV MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized to minimize on state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 6.7 mW at VGS = 10 V, ID = 21 A.
Max rDS(on) = 9.9 mW at VGS = 4.5 V, ID = 17 A.
50% Lower Qrr than Other MOSFET Suppliers.
Lowers Switching Noise/EMI.
MSL1 Robust Package Design.
100% UIL Tested.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

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Published: Nov 3, 2024 |