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FDMS1D2N03DSD - Dual N-Channel MOSFETs

General Description

a dual package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency.

Key Features

  • Q1: N-Channel.
  • Max RDS(on) = 3.25 mW at VGS = 10 V, ID = 19 A.
  • Max RDS(on) = 4 mW at VGS = 4.5 V, ID = 17 A Q2: N-Channel.
  • Max RDS(on) = 0.97 mW at VGS = 10 V, ID = 37 A.
  • Max RDS(on) = 1.25 mW at VGS = 4.5 V, ID = 34 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
  • RoHS Compliant Applicat.

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FDMS1D2N03DSD POWERTRENCH) Power Clip 30 V Asymmetric Dual N‐Channel MOSFETs General Description This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency. Features Q1: N-Channel • Max RDS(on) = 3.25 mW at VGS = 10 V, ID = 19 A • Max RDS(on) = 4 mW at VGS = 4.5 V, ID = 17 A Q2: N-Channel • Max RDS(on) = 0.97 mW at VGS = 10 V, ID = 37 A • Max RDS(on) = 1.25 mW at VGS = 4.5 V, ID = 34 A • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.